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DigiTimes· DIGITIMES·· 4 小时前

SK Hynix 借 EUV 延长 6F2 DRAM,CXMT 推进 4F2

SK Hynix bets on EUV to extend 6F-squared DRAM as CXMT pushes 4F-squared

事实摘要

SK Hynix 计划通过 EUV 光刻与制程改进延长现有 6F2 DRAM 单元架构的生命周期,同时将 4F2 与 3D DRAM 保留在技术路线图中。与此同时,中国长鑫存储(CXMT)正在推进 4F2 DRAM。

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正文 · 原文摘要

SK Hynix plans to extend the life of its existing 6F-squared DRAM cell architecture through extreme ultraviolet (EUV) lithography and process improvements, keeping 4F-squared and three-dimensional (3D) DRAM on its technology roadmap as China's ChangXin Memory Technologies (CXMT) prepares to unveil a product based on a smaller cell design.

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来源:DigiTimes · digitimes.com

所属事件:SK海力士以EUV延长6F² DRAM,长鑫推进4F²