慕尼黑工大与印度理工坎普尔分校研究多层 CFET 自热与寄生效应
Self-Heating And Parasitics Challenge Multi-Tier CFET Scaling (TU Munich, IIT Kanpur)
慕尼黑工业大学与印度理工学院坎普尔分校发表论文《Self-Heating and Parasitic Effects in Multi-Tier CFET Design》，研究自热效应及中段、后段寄生对多层 CFET 的影响。
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Researchers at the Technical University of Munich and Indian Institute of Technology Kanpur published “Self-Heating and Parasitic Effects in Multi-Tier CFET Design.” Abstract Excerpt: “We study the impact of self-heating effects (SHEs) and middle of line (MOL) and back-end of line (BEOL) induced parasitics on multi-tier CFET design, where multiple nanosheet devices are vertically stacked.... » read more The post Self-Heating And Parasitics Challenge Multi-Tier CFET Scaling (TU Munich, IIT Kanpur) appeared first on Semiconductor Engineering .
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来源：Semiconductor Engineering · semiengineering.com