ASML与台积电推进High NA EUV光罩改用12英寸
DIGITIMES Insight: TSMC, ASML's 2031 photomask target puts High NA EUV suppliers on the clock
ASML与台积电在2026年9月SPIE BACUS研讨会前宣布，计划以12英寸光罩取代沿用数十年的6英寸规格，以推进High NA EUV光刻。DigiTimes指出，两家公司设定的2031年光罩目标将给High NA EUV供应商带来时间压力。
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ASML and TSMC announced plans in September 2026, ahead of the SPIE BACUS symposium, to advance high-numerical-aperture extreme ultraviolet (High NA EUV) lithography by replacing the decades-old 6-inch photomask format with larger 12-inch masks. TSMC plans to introduce High NA EUV into advanced-node volume production from 2030, establish a 12-inch mask pilot line and begin production-line and ecosystem qualification by 2031, and achieve full readiness for 12-inch-mask High NA EUV systems supporting advanced-node manufacturing by 2033.
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来源：DigiTimes · digitimes.com