Semiconductor Engineering· Germain Fenger·· 3 天前
超越EPE预算：构建下一代计算光刻
Beyond The EPE Budget: Building The Next Generation Of Computational Lithography
事实摘要
SPIE Photomask Technology + EUV Lithography 会议上，来自IBM、Carl Zeiss SMT、Micron、ASML、Tekscend 和 Applied Materials 的专家小组讨论了边缘放置误差（EPE）正从单一光刻指标演变为系统级衡量标准。
原文与核验
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正文 · 原文摘要
Why better models, richer metrology, explainable AI, and cross-industry collaboration must come together to extend semiconductor scaling. The post Beyond The EPE Budget: Building The Next Generation Of Computational Lithography appeared first on Semiconductor Engineering .
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来源：Semiconductor Engineering · semiengineering.com