首尔大学团队实现亚伏 HZO 铁电电容，面向 DRAM 级存储

Seoul National University-led researchers published “Resolving the Kay–Dunn limit and the speed–endurance dilemma in ferroelectric Hf0.5Zr0.5O2 for DRAM-class sub-volt capacitors.” Abstract “Ferroelectric hafnium zirconium oxide can increase charge density in scaled capacitors, but its high coercive field limits the low-voltage, high endurance switching required for dynamic random-access memory and embedded ferroelectric memories. Here we show that plasma-engineered... » read more The post Fast, Sub-Volt HZO Ferroelectric Capacitors For DRAM-Like Memory (SNU) appeared first on Semiconductor Engineering .

来源只提供摘要，完整内容请打开原文。